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Dow Corning Z3MS(TM) CVD Precursor |
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CVD Precursor Gas (3MS). Dow Corning Z3MS CVD Precursor is a versatile, high-performance PECVD technology specifically designed for the deposition of thin film dielectrics. It is compatible with copper dual damascene and aluminum interconnect processes. The material is a colorless, noncorrosive, nonpyrophoric, organosilicon gas that meets the safety and purity requirements of the semiconductor industry. |
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Approx Gas Density (mg/cc): 3 Assay (percent): >99.999 Molecular Weight (g/mol): 74.19 Vapor Pressure @ 25'C (torr): 1200 |
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