Dow Corning Z3MS(TM) CVD Precursor

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Dow Corning Z3MS(TM) CVD Precursor

CVD Precursor Gas (3MS).
Dow Corning Z3MS CVD Precursor is a versatile, high-performance PECVD technology specifically designed for the deposition of thin film dielectrics.
It is compatible with copper dual damascene and aluminum interconnect processes.
The material is a colorless, noncorrosive, nonpyrophoric, organosilicon gas that meets the safety and purity requirements of the semiconductor industry.

Approx Gas Density (mg/cc): 3
Assay (percent): >99.999
Molecular Weight (g/mol): 74.19
Vapor Pressure @ 25'C (torr): 1200

Industrial field

Dow Corning Corp/Corporate Headquarters

Phone	517-496-5369; 800-248-2481
Fax	517-496-4688
Homepage	-
E-mail
Address	3100 James Savage Rd., PO.Box 994, Midland, MI 48686-0994

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